Datasheet4U Logo Datasheet4U.com

STN3P6F6 Datasheet P-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Table 1: Device summary Marking Package 3P6F6 SOT-223 Packing Tape and reel October 2016 DocID023758 Rev 5 This is information on a product in full production.

Overview

STN3P6F6 P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data Figure 1: Internal schematic diagram D(2,.

Key Features

  • Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.