STN3P6F6 Datasheet | STMicroelectronics

P-channel -60 V, 0.13 Ω typ., -3 A STrip FET™ F6 Power MOSFET in a SOT-223 package - production data Figure 1: Internal schematic diagram D(2, 4) G(1) Features Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STrip FET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Int_schem_P_ch_n Tn Z_SOT_223 Order code STN3P6F6 Table 1: Device summary Marking Package 3P6F6 SOT-223 Packing Tape and reel October 2016 Doc ID023758 Rev 5 This is information on a product in full...