STMicroelectronics STN3P6F6
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STN3P6F6 |
|---|---|
| Datasheet | STN3P6F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Table 1: Device summary Marking Package 3P6F6 SOT-223 Packing Tape and reel October 2016 DocID023758 Rev 5 This is information on a product in full production. 1/13 Contents Contents STN3P6F6 1 Electrical ratings ............................................................................. 3 2 Electrical characteris
