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STD10NM50N STF10NM50N, STP10NM50N
N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET
Features
Type
VDSS (@Tjmax)
RDS(on) max
ID
STD10NM50N STF10NM50N STP10NM50N
550 V
< 0.63 Ω 7 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
TAB
3 1
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1.
STP10NM50N Datasheet
