STP10P6F6 Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Order codes STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6 AM11258v1 Table.
STP10P6F6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss