APPLICATIONS
● Switching applications DESCRIPTION
Product status STP11N60DM2 Product summary Order code STP11N60DM2 Marking 11N60DM2 Package TO-220 Packing Tube DS11675 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V 3. VDS ≤ 480 V. Symbol Rthj-case Rthj-amb Table 2. Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Table 3. Avalanche characteristics Symbol Parameter IAR (1) Ava...
STMicroelectronics
