Datasheet Summary
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram
Features
Order code STP11N60DM2
VDS @ TJmax.
650 V
RDS(on) max.
0.420 Ω
ID 10 A
PTOT 110 W
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most...