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STP14NM65N - N-channel Power MOSFET

Datasheet Summary

Description

This series of devices is designed using the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge.

Features

  • www. DataSheet4U. com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 3 STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N 12 A 12 A 12 A(1) 12 A 12 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1. Limited only by maximum temperature allowed.
  • 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP.

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Datasheet Details

Part number STP14NM65N
Manufacturer STMicroelectronics
File Size 592.66 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP14NM65N Datasheet
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Full PDF Text Transcription

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STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 3 STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N 12 A 12 A 12 A(1) 12 A 12 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology.
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