STMicroelectronics STP220N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP220N6F7 |
|---|---|
| Datasheet | STP220N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STP220N6F7 60 V RDS(on)max 0.0024 Ω ID 120 A PTOT 237 W● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STP220N6F7 Table 1: Device summary Marking Package 220N6F7 TO-220 Packaging Tube October 2015 DocID026547 Rev 3 This is information on a product in full production. 1/13 Contents Contents STP220N6F7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220 package mechanical data ..................................................
