STP220N6F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP220N6F7 Table 1: Device summary Marking Package 220N6F7 TO-220 Packaging Tube October 2015 DocID026547 Rev 3 This is information on a product in full production.
STP220N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness