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STP220N6F7
N-channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS STP220N6F7 60 V
RDS(on)max 0.0024 Ω
ID 120 A
PTOT 237 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STP220N6F7 Datasheet
