STMicroelectronics STP270N8F7
This value is rated according to RthJC 4. When mounted on an 1 inch² FR-4, 2 Oz copper board.FEATURES
Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness ID 180 A G(1) G(1) S(2, 3, 4, 5, 6, 7) H2PAK-2, H2PAK-6 S(3) TO-220 H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3
APPLICATIONS
● Switching applicationsDESCRIPTION
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7 DS9394 - Rev 5 - March 2021 For further information contact your local STMicroelectronics sales office. STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) D...