STMicroelectronics STP27N60M2-EP
This is information on a product in full production.| Part No. | STP27N60M2-EP |
|---|---|
| Datasheet | STP27N60M2-EP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● Very low turn-off switching losses
● 100% avalanche tested
● Zener-protected Figure 1: Internal schematic diagram
APPLICATIONS
● Switching applications● Tailored for very high frequency converters (f > 150 kHz) Order code STP27N60M2-EP STW27N60M2-EP
DESCRIPTION
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Marking Package Packaging 27N60M2EP TO-220 TO-247 Tube December 2015 DocID028723 Rev 1 1/16 Contents Contents STP27N60M2-EP, STW27N60M2-EP 1 Electrical ratings .............................................................................
