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STP5N95K3 - N-Channel Power MOSFET

General Description

) structure.

Key Features

  • TAB Order code VDS RDS(on) max. ID STP5N95K3 950 V 3.5 Ω 4A t(s) TO-220 1 23 roduc D(2, TAB).
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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STP5N95K3 Datasheet N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID STP5N95K3 950 V 3.5 Ω 4A t(s) TO-220 1 23 roduc D(2, TAB) • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications te P G(1) • Switching applications sole Description Ob S(3) This MDmesh K3 Power MOSFET is the result of improvements applied to - AM01476v1_tab STMicroelectronics’ MDmesh technology, combined with a new optimized vertical ) structure. This device boasts an extremely low on-resistance, superior dynamic t(s performance and high avalanche capability, rendering it suitable for the most demanding applications.