Datasheet Summary
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220 package
Features
Order code
RDS(on) max.
950 V
3.5 Ω
4A t(s) TO-220
1 23 roduc D(2, TAB)
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications te P G(1)
- Switching applications sole Description
Ob S(3)
This MDmesh K3 Power MOSFET is the result of improvements applied to
- AM01476v1_tab STMicroelectronics’ MDmesh technology, bined with a new optimized vertical
) structure. This device boasts an extremely low on-resistance, superior dynamic t(s...