STP5N95K3 Description
Ob S(3) This MDmesh K3 Power MOSFET is the result of improvements applied to - AM01476v1_tab STMicroelectronics’ MDmesh technology, bined with a new optimized vertical ) structure. This device boasts an extremely low on-resistance, superior dynamic t(s performance and high avalanche capability, rendering it suitable for the most demanding applications. STP5N95K3 Electrical ratings 1 Electrical ratings Table.
STP5N95K3 Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected