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STP5N95K5 - N-channel Power MOSFET

General Description

AM01476v1_tab K5 technology based on an innovative proprietary vertical structure.

Key Features

  • TAB TO-220 1 23 D(2, TAB) Order code VDS STP5N95K5 950 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

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STP5N95K5 Datasheet N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS STP5N95K5 950 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 2.5 Ω ID 3.5 A G(1) • Switching applications Description S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.