STP5N95K5 Datasheet | STMicroelectronics

N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET in a TO-220 package Features TO-220 1 23 D(2, TAB) Order code 950 V - Industry’s lowest RDS(on) x area - Industry’s best FoM (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications RDS(on) max. 2.5 Ω ID 3.5 A G(1) - Switching applications Description S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...