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STP5N95K5
Datasheet
N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS
STP5N95K5
950 V
•
Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
RDS(on) max. 2.5 Ω
ID 3.5 A
G(1)
• Switching applications
Description
S(3)
This very high voltage N-channel Power MOSFET is designed using MDmesh
AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is
a dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.