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STPSC15H12-Y Datasheet Automotive Grade 1200v Power Schottky Silicon Carbide Diode

Manufacturer: STMicroelectronics

Overview: STPSC15H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data A K K A.

General Description

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • PPAP capable.
  • Operating Tj from -40 °C to 175 °C.

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