STPSC15H12 Datasheet | STMicroelectronics

1200 V, 15 A power Schottky silicon carbide diode TO-220AC DO-247 LL Product label Features - No or negligible reverse recovery - Switching behavior independent of temperature - Robust high voltage periphery - Operating from -40 °C to 175 °C - Low VF - ECOPACK2 pliant ponent Applications - EV charging stations - Solar boost converters - PV converters Description The Si C diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST Si C diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status STPSC15H12 Product summary IF(AV) 15 A VRRM 1200 V Tj (max.) 175 °C VF(typ.) 1.35 V DS11586 - Rev...