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STPSC15H12
Datasheet
1200 V, 15 A power Schottky silicon carbide diode
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K
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A K
TO-220AC
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DO-247 LL
Product label
Features
• No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK2 compliant component
Applications
• EV charging stations • Solar boost converters • PV converters
Description
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
STPSC15H12 Datasheet
