STMicroelectronics STPSC15H12
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.| Part No. | STPSC15H12 |
|---|---|
| Datasheet | STPSC15H12 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Robust high voltage periphery
● Operating from -40 °C to 175 °C
● Low VF
● ECOPACK2 compliant component
APPLICATIONS
● EV charging stations● Solar boost converters
● PV converters
DESCRIPTION
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status STPSC15H12 Product summary IF(AV) 15 A VRRM 1200 V Tj (max.) 175 °C VF(typ.) 1.35 V DS11586 - Rev 4 - June 2021 For further information contact your local STMicroelectronics sales office.
