STMicroelectronics STPSC20H12-Y
the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.| Part No. | STPSC20H12-Y |
|---|---|
| Datasheet | STPSC20H12-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | silicon carbide power Schottky diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● No or negligible reverse recovery
● Switching behavior independent of temperature
● Robust high voltage periphery
● PPAP capable
● Operating Tj from -40 °C to 175 °C
● D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
● ECOPACK compliant
APPLICATIONS
● On board chargerDESCRIPTION
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, DS11830 - Rev 4 - May 2019 For further information contact your local STMicroelectronics sales office. STPSC20H12-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbo...
