Datasheet Details
| Part number | STPSC20H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 462.67 KB |
| Description | silicon carbide power Schottky diode |
| Download | STPSC20H12-Y Download (PDF) |
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| Part number | STPSC20H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 462.67 KB |
| Description | silicon carbide power Schottky diode |
| Download | STPSC20H12-Y Download (PDF) |
|
|
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The SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
STPSC20H12-Y Datasheet Automotive 1200 V, 20 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product label Product status link STPSC20H12-Y Product summary IF(AV) 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part Number | Description |
|---|---|
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| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
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| STPSC2006CW | 600V power Schottky silicon carbide diode |
| STPSC20G12-Y | 20A power Schottky high surge silicon carbide diode |
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| STPSC2H12 | 1200V power Schottky silicon carbide diode |