STMicroelectronics STPSC20H12
The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.| Part No. | STPSC20H12 |
|---|---|
| Datasheet | STPSC20H12 Download |
| Manufacturer |  STMicroelectronics |
| Description | power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● None or negligible reverse recovery● Switching behavior independent of temperature
● Robust high voltage periphery
● Operating Tj from -40 °C to 175 °C
● ECOPACK2 compliant component
APPLICATIONS
● Solar inverter● Boost PFC
● Air conditioning equipment
● UPS power supply
● Telecom / Server power equipment
● HEV/EV OBC (On board battery chargers)
● EV Charging station
DESCRIPTION
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode boost the performance in hard switching conditions. This rectifier enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product summary IF(AV) 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V DS11651 - Rev 6 - July 2024 For further information contact your local STMicroelectronics sales office.
