Datasheet Details
| Part number | STPSC20H12CWY |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 252.98 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20H12CWY Download (PDF) |
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| Part number | STPSC20H12CWY |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 252.98 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20H12CWY Download (PDF) |
|
|
|
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC20H12CWY Datasheet 20 A 1200 V power Schottky silicon carbide diode Product status link STPSC20H12CWY Product summary IF(AV) 2 x 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part Number | Description |
|---|---|
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| STPSC2006CW | 600V power Schottky silicon carbide diode |
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