Datasheet Summary
20 A 1200 V power Schottky silicon carbide diode
Product status link STPSC20H12CWY
Product summary
IF(AV)
2 x 10 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
Product label
Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 pliant
Applications
- OBC (On Board Battery chargers)
- PHEV
- EV charging stations
- Resonant LLC topology
- PFC functions (Power Factor Corrector)
Description
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using...