STS8DN6LF6AG - Automotive-grade dual N-channel Power MOSFET

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STMicroelectronics

Part number	STS8DN6LF6AG
Manufacturer	STMicroelectronics
File Size	311.06 KB
Description	Automotive-grade dual N-channel Power MOSFET
Datasheet	STS8DN6LF6AG Datasheet
Additional preview pages of the STS8DN6LF6AG datasheet.

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6).
AEC-Q101 qualified.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.
Logic level G1(2) G2(4).

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Published: Jan 22, 2019 |