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STS8N6LF6AG - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID STS8N6LF6AG 60 V 24 mΩ 8A PTOT 3.2 W.
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Logic level.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS8N6LF6AG Datasheet Automotive-grade N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max. ID STS8N6LF6AG 60 V 24 mΩ 8A PTOT 3.2 W • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Applications • Switching applications AM01475v3 Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.