STMicroelectronics STU13N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.| Part No. | STU13N60M2 |
|---|---|
| Datasheet | STU13N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 11A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STU13N60M2 600 V 380 mΩ 11 A 3 2 1● Extremely low gate charge
● Excellent output capacitance (Coss) profile IPAK
● 100% avalanche tested
● Zener-protected D(2, TAB)
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STU13N60M2 Product summary Order code STU13N60M2 Marking 13N60M2 Package IPAK Packing Tube DS9368 - Rev 6 - October 2023 For further information contact your local STMicroelectronics sales office. STU13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
