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STU13N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • TAB TAB TO-220 3 2 1 3 2 1 IPAK Figure 1. Internal schematic diagram , TAB Order code STP13N65M2 STU13N65M2 VDS RDS(on) max ID 650 V 0.43Ω 10A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB TAB TO-220 3 2 1 3 2 1 IPAK Figure 1. Internal schematic diagram , TAB Order code STP13N65M2 STU13N65M2 VDS RDS(on) max ID 650 V 0.43Ω 10A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.