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STU16N65M2 - N-channel Power MOSFET

General Description

technology.

Key Features

  • TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile IPAK.
  • 100% avalanche tested.
  • Zener-protected D(2, TAB).

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Full PDF Text Transcription (Reference)

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STU16N65M2 Datasheet N-channel 650 V, 320 mΩ typ., 11 A MDmesh M2 Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1 • Extremely low gate charge • Excellent output capacitance (Coss) profile IPAK • 100% avalanche tested • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.