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STU10N60M2 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220 TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram , TAB Features Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.