Datasheet Summary
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
- production data
3 1
D2 PAK
3 2 1
TO-220
3 1
DPAK
IPAK
2 1
Figure 1. Internal schematic diagram , TAB
Features
Order codes VDS @ TJmax
RDS(on) max
STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2
650 V
0.600 Ω 7.5 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs developed using a new...