STMicroelectronics STU10N60M2
This is information on a product in full production.| Part No. | STU10N60M2 |
|---|---|
| Datasheet | STU10N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A● Extremely low gate charge
● Lower RDS(on) x area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 Table 1. Device summary Marking Package 2 D PAK 10N60M2 DPAK TO-220 IPAK Packaging Tape and reel Tube December 2013 DocID024710 Rev 2 1/24 24 Contents Contents STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
