STU10NB80 Datasheet PDF | STMicroelectronics

STMicroelectronics STU10NB80

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STU10NB80
Datasheet	STU10NB80 Download
Manufacturer	STMicroelectronics
Description	N-Channel 800V 10A MOSFET
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. 23 1 Max220 INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR VGS ID ID IDM(●) Ptot Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area Value 800 800 ± 30 10 6.3 40 160 1.28 4 -65 to 150 150 (1) ISD ≤10 Α, ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX April 1999 Unit V V V A A A W W/oC V/ns oC...