STMicroelectronics STU11N65M2
650V 7A N-Channel Power MOSFET
FEATURES
Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected PTOT 85 W Package DPAK TO-220 IPAK
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office. STD11N65M2, STP11N65M2, STU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM (1) D...