STU11NB60 Datasheet PDF | STMicroelectronics

STMicroelectronics STU11NB60

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STU11NB60
Datasheet	STU11NB60 Download
Manufacturer	STMicroelectronics
Description	N-Channel 600V 11A MOSFET
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DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. 23 1 Max220 INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit VDS VDGR VGS ID ID IDM(●) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor 600 600 ± 30 11 7 44 160 1.28 V V V A A A W W/oC dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area 4 -65 to 150 150 (1) ISD ≤11 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ns oC oC January 1999 1/5 This is preliminary information on a new product now in development or undergoing evaluation.