Datasheet Summary
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
- production data
TAB 3
DPAK
3 2 1
TO-220FP
3 2 1
TO-220
IPAK
2 1
Figure 1. Internal schematic diagram , TAB
Features
Order codes
STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6
VDS -60 V
RDS(on) max 0.16 Ω
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
ID -10 A
Applications
- Switching applications
Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs...