Datasheet Details
| Part number | STU10P6F6 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.13 MB |
| Description | P-CHANNEL POWER MOSFET |
| Datasheet |
 STU10P6F6 Datasheet
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General Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.
The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Table 1.
Key Features
- Order codes STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6 VDS -60 V RDS(on) max 0.16 Ω.
- Very low on-resistance.
- Very low gate charge.
- High avalanche ruggedness.
- Low gate drive power loss ID -10 A.