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STW265N6F6AG
Automotive N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-247 package
Datasheet - preliminary data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code STW265N6F6AG
VDS 60 V
RDS(on) max 2.85 mΩ
ID 180 A
Designed for automotive applications Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.