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STW56N60DM2
N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
3 2 1 TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code VDS STW56N60DM2 600 V
RDS(on) max.
0.060 Ω
ID 50 A
PTOT 360 W
• Fast-recovery body diode • Extremely low gate charge and input
capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.