Datasheet4U Logo Datasheet4U.com

STW56N60DM2 - N-CHANNEL MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code VDS STW56N60DM2 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW5093 2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-END ST Microelectronics
STW5094 18 BIT 8kHz TO 48kHz LOW POWER STEREO AUDIO DAC ST Microelectronics
STW5095 Low Power Asynchronous Stereo Audio Codec with Integrated Power Amplifiers ST Microelectronics
STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics
STW50NB20 N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW56N60M2 N-CHANNEL POWER MOSFET
STW56N60M2-4 N-CHANNEL POWER MOSFET
STW56N65DM2 N-CHANNEL MOSFET
STW56N65M2 N-channel Power MOSFET
STW56N65M2-4 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW56N60DM2 N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) Features Order code VDS STW56N60DM2 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.