STW56N60M2 Datasheet | STMicroelectronics

N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS at TJ max. 650 V - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STW56N60M2 Product summary Order code Marking 56N60M2 Package TO-247 Packing Tube...