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STW56N60M2 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS at TJ max. STW56N60M2 650 V.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 55 mΩ ID 52 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW56N60M2 Datasheet N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS at TJ max. STW56N60M2 650 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.