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STW56N60M2-4 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS at TJ max. RDS(on) max. ID STW56N60M2-4 650 V 55 mΩ 52 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW56N60M2-4 Datasheet N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS at TJ max. RDS(on) max. ID STW56N60M2-4 650 V 55 mΩ 52 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications Power source (2) AM10177v2Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.