STW56N60M2-4 Datasheet | STMicroelectronics

N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS at TJ max. RDS(on) max. 650 V 55 mΩ 52 A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected - Excellent switching performance thanks to the extra driving source pin Applications - Switching applications Power source (2) AM10177v2Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STW56N60M2-4 Product summary Order code Marking 56N60M2 Package TO247-4 Packing...