STMicroelectronics VND10N06-1
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications.| Part No. | VND10N06-1 |
|---|---|
| Datasheet | VND10N06-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | fully autoprotected Power MOSFET |
| Buy | Stock & Price |
FEATURES
Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V● Linear current limitation
● Thermal shutdown
● Short circuit protection
● Integrated clamp
● Low current drawn from input pin
● Logic level input threshold
● ESD protection
● Schmitt trigger on input
● High noise immunity 3 1 DPAK TO-252 IPAK TO-251 3 2 1
DESCRIPTION
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Table 1. Device summary Package DPAK IPAK Tube VND10N06 VND10N06-1 Order codes Tape and reel VND10N06TR September 2013 Rev 4 1/25 25 Contents Contents VND10N06 / VND10N06-1 1 Block diagra
