VND10N06-1 Datasheet | STMicroelectronics

VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V - Linear current limitation - Thermal shutdown - Short circuit protection - Integrated clamp - Low current drawn from input pin - Logic level input threshold - ESD protection - Schmitt trigger on input - High noise immunity 3 1 DPAK TO-252 IPAK TO-251 2 1 Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current...