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VND10N06 - fully autoprotected Power MOSFET

General Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications.

Key Features

  • Max on-state resistance (per ch. ) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Logic level input threshold.
  • ESD protection.
  • Schmitt trigger on input.
  • High noise immunity 3 1 DPAK TO-252 IPAK TO-251 3 2 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Logic level input threshold ■ ESD protection ■ Schmitt trigger on input ■ High noise immunity 3 1 DPAK TO-252 IPAK TO-251 3 2 1 Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Table 1.