Datasheet4U.com

VNS1NV04D Datasheet PDF

STMicroelectronics VNS1NV04D

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.
Part No. VNS1NV04D
Datasheet VNS1NV04D Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
Buy Stock & Price
VNS1NV04D datasheet page 1 preview

DESCRIPTION

Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN1 DRAIN2 OVERVOLTAGE CLAMP INPUT1 GATE CONTROL OVERVOLTAGE CLAMP GATE CONTROL INPUT2 OVER TEMPERATURE LINEAR CURRENT LIMITER LINEAR CURRENT LIMITER OVER TEMPERATURE SOURCE1 SOURCE2 February 2003 1/14 1 VNS1NV04D ABSOLUTE MAXIMUM RATING Symbol VDSn VINn IINn RIN MINn IDn IRn VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VINn=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pins only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Operating Junction Temperature Case Operating Temperature Storage Temperature Value Internally Clamped Internally Clamped +/-20 330 Internally Limited -3 4000 16500 4 Internally limited Internally limited -55 to 150...
VNS1NV04D page 2 preview VNS1NV04D page 3 preview