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VNS1NV04D - FULLY AUTOPROTECTED POWER MOSFET

General Description

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.

Key Features

  • During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® VNS1NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D (*) Per each device RDS(on) 250 mΩ (*) Ilim 1.7 A (*) Vclamp 40 V (*) n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE SO-8 POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM www.DataSheet4U.com Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.