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VNS1NV04DP-E Datasheet

Manufacturer: STMicroelectronics
VNS1NV04DP-E datasheet preview

Datasheet Details

Part number VNS1NV04DP-E
Datasheet VNS1NV04DP-E-STMicroelectronics.pdf
File Size 369.14 KB
Manufacturer STMicroelectronics
Description fully autoprotected Power MOSFET
VNS1NV04DP-E page 2 VNS1NV04DP-E page 3

VNS1NV04DP-E Overview

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPowerâ„¢ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.

VNS1NV04DP-E Key Features

  • Linear current limitation
  • Thermal shutdown
  • Short circuit protection
  • Integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection
  • Direct access to the gate of the power mosfet
  • patible with standard power mosfet
  • In pliance with the 2002/95/EC european
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VNS1NV04DP-E Distributor

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