Datasheet4U Logo Datasheet4U.com

VNS1NV04DP-E - fully autoprotected Power MOSFET

General Description

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.

The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.

Key Features

  • Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the power mosfet (analog driving).
  • Compatible with standard power.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by STMicroelectronics

Part Number Description
VNS1NV04D FULLY AUTOPROTECTED POWER MOSFET
VNS1NV04 fully autoprotected Power MOSFET
VNS1NV04P-E fully autoprotected Power MOSFET
VNS14NV04 fully autoprotected Power MOSFET
VNS14NV04P-E fully autoprotected Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard power mosfet • In compliance with the 2002/95/EC european directive SO-8 Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.