VNS1NV04DP-E
Features
Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1)
1. Per each device.
RDS(ON) ILIMH
VCLAMP
250m 1.7A 40V
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power mosfet
(analog driving)
- patible with standard power mosfet
- In pliance with the 2002/95/EC european directive
SO-8
Description
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
Table 1. Device...
