Download VNS1NV04DP-E Datasheet PDF
VNS1NV04DP-E page 2
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VNS1NV04DP-E Description

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPowerâ„¢ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.

VNS1NV04DP-E Key Features

  • Linear current limitation
  • Thermal shutdown
  • Short circuit protection
  • Integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection
  • Direct access to the gate of the power mosfet
  • patible with standard power mosfet
  • In pliance with the 2002/95/EC european