VNS1NV04P-E
Features
Parameter
Symbol Value
Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage
RON ILIMH VCLAMP
250 m 1.7 A 40 V
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power
MOSFET (analog driving)
- patible with standard Power MOSFET
3 2 1
SOT-223
SO-8
Description
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 k Hz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
September 2013
Table 1. Device summary
Package
Order codes
Tube
Tape and reel
SOT-223 VNN1NV04P-E VNN1NV04PTR-E
SO-8...
