SPC6601 Description
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where...
SPC6601 Key Features
- N-Channel 30V/2.8A,RDS(ON)=68mΩ@VGS=10V 30V/2.3A,RDS(ON)=78mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=108mΩ@VGS=2.5V
- P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=148mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TSOT-23-6L package design
SPC6601 Applications
- Power Management in Note book