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SPC6605 - N & P Pair MOSFET

Description

The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V.
  • P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOT-23-6L package design PIN.

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Datasheet preview – SPC6605

Datasheet Details

Part number SPC6605
Manufacturer SYNC POWER
File Size 665.72 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC6605 Datasheet
Additional preview pages of the SPC6605 datasheet.

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Full PDF Text Transcription

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SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.
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