SPC6605 Description
The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where...
SPC6605 Key Features
- N-Channel
- P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS (ON)
- TSOT-23-6L package design
SPC6605 Applications
- Power Management in Note book