SPC6606 Overview
Description
The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- N-Channel 12V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 12V/3.0A,RDS(ON)=35mΩ@VGS=2.5V 12V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
- P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TDFN2x2-6L package design
