SPC6606 Overview
The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery...
SPC6606 Key Features
- N-Channel
- P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TDFN2x2-6L package design