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SPC6606 - N & P Pair MOSFET

Description

The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 12V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 12V/3.0A,RDS(ON)=35mΩ@VGS=2.5V 12V/2.0A,RDS(ON)=50mΩ@VGS=1.8V.
  • P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TDFN2x2-6L package design.

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Datasheet preview – SPC6606

Datasheet Details

Part number SPC6606
Manufacturer SYNC POWER
File Size 517.74 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC6606 Datasheet
Additional preview pages of the SPC6606 datasheet.

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Full PDF Text Transcription

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SPC6606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES  N-Channel 12V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 12V/3.0A,RDS(ON)=35mΩ@VGS=2.5V 12V/2.0A,RDS(ON)=50mΩ@VGS=1.8V  P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.
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