• Part: SPC6606
  • Manufacturer: SYNC POWER
  • Size: 517.74 KB
Download SPC6606 Datasheet PDF
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SPC6606 Key Features

  • N-Channel
  • P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • TDFN2x2-6L package design

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SPC6606 Description

The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery...