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SPN1024 Datasheet PDF

SYNC POWER SPN1024

The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
Part No. SPN1024
Datasheet SPN1024 Download
Manufacturer
SYNC POWER
Description Dual N-Channel MOSFET
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SPN1024 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter

FEATURES

● N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-563 (SC-89-6L) package design PIN CONFIGURATION (SOT-563 / SC-89-6L) PART MARKING 2020/04/16 Ver.3 Page 1 SPN1024 Dual N-Channel Enhancement Mode MOSFET PIN

DESCRIPTION

Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1

DESCRIPTION

Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPN1024S56RGB SOT-563 ※ SPN1024S56RGB : Tape Reel ; Pb – Free, Halogen - Free Part Marking B ABSOULTE

MAXIMUM RATINGS

(TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=80℃ Pulsed Drain Current Continu...
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