Datasheet4U Logo Datasheet4U.com

SPN1022 - Dual N-Channel MOSFET

General Description

The SPN1022 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-563 (SC-89-6L) package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN1022
Manufacturer SYNC POWER
File Size 338.04 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN1022 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPN01N60C3 Cool MOS Power Transistor Infineon
SPN01N60S5 Cool MOS Power-Transistor Infineon Technologies
SPN02N60C3 Power Transistor Infineon Technologies
SPN02N60S5 Power Transistor Infineon Technologies
SPN03N60C3 Cool MOS Power Transistor Infineon Technologies

Other Datasheets by SYNC POWER

Part Number Description
SPN1024 Dual N-Channel MOSFET
SPN1026 Dual N-Channel MOSFET
SPN1028 Dual N-Channel MOSFET
SPN100T12 N-Channel MOSFET
SPN1012 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPN1022 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1022 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.