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SPN1028 - Dual N-Channel MOSFET

General Description

The SPN1028 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Key Features

  • 30V/0.95A , RDS(ON)=550mΩ@VGS=4.5V.
  • 30V/0.75A , RDS(ON)=650mΩ@VGS=2.5V.
  • 30V/0.65A , RDS(ON)=850mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-563 (SC-89-6L) package design PIN.

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Datasheet Details

Part number SPN1028
Manufacturer SYNC POWER
File Size 380.77 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN1028 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN1028 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1028 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.