SPN1026 Overview
The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 320mA DC and can deliver pulsed currents up to 1.0A.
SPN1026 Key Features
- 60V/0.50A , RDS(ON)=5.0Ω@VGS=10V
- 60V/0.30A , RDS(ON)=5.5Ω@VGS=5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-563 (SC-89-6L) package design