SPN7002K Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640m A DC and can deliver pulsed currents up to 950m A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays Features 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V 60V/0.20A , RDS(ON)= 4.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2012/06/20 Ver.3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number SPN7002KS23RGB Package SOT-23 Part Marking NKXX ※ SPN7002KS23RGB : Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage - Continuous Continuous Drain Current(TJ=150℃) Pulsed Drain Current (∗) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=25℃ Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA Typical 60 ±20 0.3 0.8 0.35 -55 ~ 150 -55 ~ 150 350 Unit V V A A W ℃ ℃ ℃/W (∗) Pulse width limited by safe operating area 2012/06/20 Ver.3 Page 2 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage...