Datasheet4U Logo Datasheet4U.com

SPN9926 - N-Channel MOSFET

Description

The SPN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V.
  • 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V.
  • 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

📥 Download Datasheet

Datasheet preview – SPN9926

Datasheet Details

Part number SPN9926
Manufacturer SYNC POWER
File Size 430.23 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9926 Datasheet
Additional preview pages of the SPN9926 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN9926 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=90mΩ@VGS=1.
Published: |