SPN9926W Overview
The SPN9926W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN9926W Key Features
- 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V
- 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V
- 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design
SPN9926W Applications
- Power Management in Note book