SPN9926W Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V - 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V - 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOP- 8 package design APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter PIN CONFIGURATION(SOP- 8) PART MARKING 2020/03/05 Ver.2 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPN9926WS8RGB SOP-8...