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SPN9926W - N-Channel MOSFET

General Description

The SPN9926W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V.
  • 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V.
  • 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

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Datasheet Details

Part number SPN9926W
Manufacturer SYNC POWER
File Size 429.46 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9926W Datasheet

Full PDF Text Transcription for SPN9926W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN9926W. For precise diagrams, and layout, please refer to the original PDF.

SPN9926W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high ce...

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ncement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=90mΩ@VGS=1.

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