SPN9926A - N-Channel MOSFET

SYNC POWER

General Description

The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP.
8P package design.

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SPN9926A n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN9926A
Manufacturer	SYNC POWER
File Size	250.77 KB
Description	N-Channel MOSFET
Datasheet	SPN9926A Datasheet

Full PDF Text Transcription for SPN9926A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN9926A. For precise diagrams, and layout, please refer to the original PDF.

SPN9926A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high ce...

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ncement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=42mΩ@VGS=2.

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