SPN9926A Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features ‹ 20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V ‹ 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP - 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOP - 8P) .. PART MARKING 2007/ 06 / 20 Ver.1 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN9926AS8RG SPN9926AS8TG ※ SPN9926AS8RG : 13” Tape Reel ; Pb - Free ※ SPN9926AS8TG : Tube ; Pb - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter .. Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Package SOP- 8P SOP- 8P Part Marking SPN9926A SPN9926A Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 20 ±12 Unit Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient V V A A A W ℃ ℃...