SPP2309 Overview
The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPP2309 Key Features
- P-Channel
- 20V/2.5A,RDS(ON)=0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)=0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)=0.75Ω@VGS=-1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
SPP2309 Applications
- Power Management in Note book