SPP2309 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - P-Channel -20V/2.5A,RDS(ON)=0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)=0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)=0.75Ω@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2020/02/14 Ver.3 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP2309S23RGB SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2309S23RGB : Tape Reel ;...