SPP2327 Datasheet | SYNC POWER

DESCRIPTION The SPP2327 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - Networking - LED applications FEATURES - -100V/-0.6A,RDS(ON)=650mΩ@VGS=-10V - -100V/-0.4A,RDS(ON)=760mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-6L package design PIN CONFIGURATION SOT-23-6L PART MARKING 2020/03/30 Ver.4 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION (SOT-23-6L) Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain ORDERING INFORMATION Part Number Package SPP2327S26RGB SOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2327S26RGB : Tape Reel ; Pb - Free ; Halogen - Free Part Marking 27 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source...