SPP2323 Datasheet | SYNC POWER

DESCRIPTION Channel Enhance Am PPe LICn At TIOMNSode MOSFET The SPP2323 is the Dual P-Channel logic - Power Management in Note book enhancement mode power field effect transistors are - Portable Equipment - Battery Powered System produced using high cell density, DMOS trench - DC/DC Converter technology. This high density process is especially - Load Switch tailored to minimize on-state resistance. These devices - DSC are particularly suited for low voltage applications - LCD Display inverter notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES - -20V/-3.3A,RDS(ON)=65mΩ@VGS=-4.5V -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TDFN2x2-6L package design PIN CONFIGURATION( TDFN2x2-6L) PART MARKING 2020/05/18 Ver 3 Page 1 Dual P-Channel Enhancement Mode MOSFET SPC6606 PIN DESCRIPTION NPin& P Pair Enha Snymcboel ment Mode DMesc Oript Sion FET S1 Source 1 G1 Gate 1 D2 Drain 2 S2 Source 2 G2 Gate...