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SPP2323 - Dual P-Channel MOSFET

General Description

Channel EnhanceAmPPeLICnAtTIOMNSode MOSFET The SPP2323 is the Dual P-Channel logic Power Management in Note book enhancement mode power field effect transistors are Portable Equipment Battery Powered System produced using high cell density, DMOS trench D

Key Features

  • -20V/-3.3A,RDS(ON)=65mΩ@VGS=-4.5V -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TDFN2x2-6L package design PIN.

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Datasheet Details

Part number SPP2323
Manufacturer SYNC POWER
File Size 327.47 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SPP2323 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP2323 Dual P-Channel Enhancement Mode MOSFET MOSFETMOSFET N DESCRIPTION Channel EnhanceAmPPeLICnAtTIOMNSode MOSFET The SPP2323 is the Dual P-Channel logic • Power Management in Note book enhancement mode power field effect transistors are • Portable Equipment • Battery Powered System produced using high cell density, DMOS trench • DC/DC Converter technology. This high density process is especially • Load Switch tailored to minimize on-state resistance. These devices • DSC are particularly suited for low voltage applications • LCD Display inverter notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES  -20V/-3.3A,RDS(ON)=65mΩ@VGS=-4.5V -20V/-2.