SPP2329 - P-Channel MOSFET

SYNC POWER

General Description

The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Key Features

-150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V.
-150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.5V.
High density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-6L package design PIN.

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SPP2329 p-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPP2329
Manufacturer	SYNC POWER
File Size	152.50 KB
Description	P-Channel MOSFET
Datasheet	SPP2329 Datasheet

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Full PDF Text Transcription (Reference)

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SPP2329 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP2329 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  -150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V  -150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.