SPP2329 Overview
The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP2329 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPP2329 Key Features
- 150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V
- 150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.5V
- High density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design