SDD30N03L
SDD30N03L is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
FEATURES
Super high dense cell design for low RDS(ON).
VDSS
30V
30A
RDS(ON) (m W ) TYP
11.5 @ VGS = 10V 17 @ VGS = 4.5V
Rugged and reliable. TO-252 and TO-251 Package.
SDU SERIES TO-252AA(D-PAK)
SDD SERIES TO-251(l-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a
Symbol VDS VGS @TJ=125 C ID IDM IS PD TJ, TSTG
Limit 30 20 30 90 30 50 0.3 -55 to 175
Unit V V A A A W W/ C C
Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
R JC R JA
3 50
C/W C/W
SDU/D30N03L
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
..
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) g FS b
Condition
VGS = 0V, ID = 250u A VDS = 24V, VGS = 0V VGS = +/-20V, VDS = 0V VDS = VGS, ID = 250u A VGS = 10V, ID =15A VGS = 4.5V, ID = 12A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A
Min Typ Max Unit
30 10 V u A +/-100 n A 1 1.5 11.5 17 40 30 1200 530 150 3 14 21 V m ohm m ohm
Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance...
